JPH0256343U - - Google Patents

Info

Publication number
JPH0256343U
JPH0256343U JP13638888U JP13638888U JPH0256343U JP H0256343 U JPH0256343 U JP H0256343U JP 13638888 U JP13638888 U JP 13638888U JP 13638888 U JP13638888 U JP 13638888U JP H0256343 U JPH0256343 U JP H0256343U
Authority
JP
Japan
Prior art keywords
plasma
expansion chamber
chamber
microwave
magnetic field
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP13638888U
Other languages
English (en)
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP13638888U priority Critical patent/JPH0256343U/ja
Publication of JPH0256343U publication Critical patent/JPH0256343U/ja
Pending legal-status Critical Current

Links

Landscapes

  • Electron Sources, Ion Sources (AREA)
JP13638888U 1988-10-19 1988-10-19 Pending JPH0256343U (en])

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13638888U JPH0256343U (en]) 1988-10-19 1988-10-19

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13638888U JPH0256343U (en]) 1988-10-19 1988-10-19

Publications (1)

Publication Number Publication Date
JPH0256343U true JPH0256343U (en]) 1990-04-24

Family

ID=31396850

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13638888U Pending JPH0256343U (en]) 1988-10-19 1988-10-19

Country Status (1)

Country Link
JP (1) JPH0256343U (en])

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012524376A (ja) * 2009-04-16 2012-10-11 ヴァリアン セミコンダクター イクイップメント アソシエイツ インコーポレイテッド 幅広リボンビームの生成および制御のための複合型icpおよびecrプラズマ源

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012524376A (ja) * 2009-04-16 2012-10-11 ヴァリアン セミコンダクター イクイップメント アソシエイツ インコーポレイテッド 幅広リボンビームの生成および制御のための複合型icpおよびecrプラズマ源

Similar Documents

Publication Publication Date Title
US5133825A (en) Plasma generating apparatus
US4713585A (en) Ion source
KR940010844B1 (ko) 이온 원(源)
US5006218A (en) Sputtering apparatus
ITFI940194A1 (it) Sorgente di plasma a radiofrequenza
EP0639939B1 (en) Fast atom beam source
EP0502429B1 (en) Fast atom beam source
WO2001022465A1 (en) Plasma source of linear ion beam
JPH0256343U (en])
JP3504290B2 (ja) 低エネルギー中性粒子線発生方法及び装置
US6040547A (en) Gas discharge device
JP2567892B2 (ja) プラズマ処理装置
US4931698A (en) Ion source
JPH09259781A (ja) イオン源装置
JP2834147B2 (ja) 荷電粒子ビームの形成方法
JPS63171954U (en])
JPS6127053A (ja) 電子ビ−ム源
JPH01161699A (ja) 高速原子線源
JPS617542A (ja) マイクロ波イオン源
JPH06101394B2 (ja) 高速原子線源
CN116798843A (zh) 一种粒子射频装置
JPH0650111B2 (ja) Rf型イオン源
JPH0636695A (ja) 高周波イオン源装置
JPS59151737A (ja) イオン源
JPH02114433A (ja) イオン処理装置